Plasma waves Terahertz detection by field effect transistor in Quantinzing magnetic fields
نویسندگان
چکیده
Detection of THz radiation by a Field Effect Transistor InGaAs/InAlAs transistor was investigated at 4.2 K as a function of the magnetic field and gate voltage. We observed oscillations of the photovoltaic signal analogous to Shubnikov-de Haas oscillations, as well as their strong enhancement at the cyclotron resonance conditions. The results are successfully quantitatively described within the frame of a recent theory, taking into account a new source of nonlinearity related to Shubnikov-de Haas effect. We show that the detection is due to gated plasmon.
منابع مشابه
Terahertz Plasma Wave Electronics
Modern microelectronics and nanoelectronics devices rely on the drift of electron localized at the interfaces between different materials, such silicon and silicon dioxide or gallium arsenide and aluminum gallium arsenide. Hence, the electron drift transit time in the active region of a device determines the maximum device speed. Instead of the electron drift, we propose to use the waves of the...
متن کاملNonresonant Response Characteristics to Terahertz Radiation of FETs: Influence of Magnetic Field
Nonresonant detection on terahertz radiation of field effect transistors by the influence of magnetic field is studied in this paper. The influence of the magnetic field upon the electron mobility in the transistor channel is discussed and the corresponding influence on the nonresonant detection photoresponse is analyzed in detail. Based on the work before, the numerical tool has been modified ...
متن کاملPredictive of the quantum capacitance effect on the excitation of plasma waves in graphene transistors with scaling limit.
Plasma waves in graphene field-effect transistors (FETs) and nano-patterned graphene sheets have emerged as very promising candidates for potential terahertz and infrared applications in myriad areas including remote sensing, biomedical science, military, and many other fields with their electrical tunability and strong interaction with light. In this work, we study the excitations and propagat...
متن کاملTerahertz Emission and Detection by Plasma Waves in Nanometer Size Field Effect Transistors
Plasma oscillations in nanometer field effect transistors are used for detection and generation of electromagnetic radiation of THz frequency. Following first observations of resonant detection in 150 nm gate length GaAs HEMT, we describe recent observations of room temperature detection in nanometer Si MOSFETs, resonant detection in GaN/AlGaN HEMTs and improvement of room temperature detection...
متن کاملTerahertz Imaging and Broadband Wireless Communication Using Plasma Oscillations in Nanometer Field Effect Transistors
An overview of recent results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular nonlinearity and dynamic range of these detectors are discussed. We present also results on THz detection by Graphene field effect transistors. As a conclusion, we will show one of the first real world application of the FET THz detectors: a d...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2009